1.25 GHz sine wave gating InGaAs/InP single-photon detector with monolithically integrated readout circuit

摘要

InGaAs/InP single-photon detectors (SPDs) are the key devices forapplications requiring near-infrared single-photon detection. Gating mode is aneffective approach to synchronous single-photon detection. Increasing gatingfrequency and reducing module size are important challenges for the design ofsuch detector system. Here we present for the first time an InGaAs/InP SPD with1.25 GHz sine wave gating using a monolithically integrated readout circuit(MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturizationof avalanche extraction for high-frequency sine wave gating. In the MIRC,low-pass filters and a low-noise radio frequency amplifier are integrated basedon the technique of low temperature co-fired ceramic, which can effectivelyreduce the parasitic capacitance and extract weak avalanche signals. We thencharacterize the InGaAs/InP SPD to verify the functionality and reliability ofMIRC, and the SPD exhibits excellent performance with 27.5 % photon detectionefficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 Kand 100 ns hold-off time. With this MIRC, one can further design miniaturizedhigh-frequency SPD modules that are highly required for practical applications.